%0 Journal Article
%T Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs
%+ Laboratoire Charles Coulomb (L2C)
%+ A.F. Ioffe Physical-Technical Institute
%A Dyakonova, N.
%A Karandashev, S.A.
%A Levinshtein, M.E.
%A Matveev, B.A.
%A Remennyi, M.A.
%A Usikova, A.A.
%Z El-Peacetolero No 945320
%< avec comité de lecture
%@ 1350-4495
%J Infrared Physics and Technology
%I Elsevier
%V 117
%P 103867
%8 2021-09
%D 2021
%R 10.1016/j.infrared.2021.103867
%K Mid-IR photodetectors; InAs photodiodes; Low frequency noise; Photovoltaic mode; Room temperature
%Z Physics [physics]Journal articles
%X Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode- photodiode pairs is investigated for the first time at 300 K. It is shown that photocurrent fluctuations under LED illumination are smaller than photocurrent fluctuations under a black body illumination. When the photodiode is illuminated by LED, the spectral noise density follows the 1/f dependence. In the case of a black body illumination we observe a significant contribution of generation-recombination noise.
%G English
%Z IRP TeraMIR
%L hal-04104578
%U https://hal.science/hal-04104578
%~ CNRS
%~ L2C
%~ UNIV-MONTPELLIER
%~ UM-2015-2021
%~ UM-EPE