%0 Journal Article
%T The impact of valley profile on the mobility and Kerr rotation of transition metal dichalcogenides
%+ Laboratoire Charles Coulomb (L2C)
%+ Universiteit Utrecht / Utrecht University [Utrecht]
%+ Université de Liège
%A Sohier, Thibault
%A de Melo, Pedro
%A Zanolli, Zeila
%A Verstraete, Matthieu Jean
%< avec comité de lecture
%@ 2053-1583
%J 2D Materials
%I IOP Publishing
%V 10
%N 2
%8 2023-01-11
%D 2023
%Z 2207.00452
%R 10.1088/2053-1583/acb21c
%Z Physics [physics]/Condensed Matter [cond-mat]Journal articles
%X Abstract The transport and optical properties of semiconducting transition metal dichalcogenides around room temperature are dictated by electron-phonon scattering mechanisms within a complex, spin-textured and multi-valley electronic landscape. The relative positions of the valleys are critical, yet they are sensitive to external parameters and very difficult to determine directly. We propose a first-principles model as a function of valley positions to calculate carrier mobility and Kerr rotation angles, and apply it to MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$. The model brings valuable insights, as well as quantitative predictions of macroscopic properties for a wide range of carrier density. The doping-dependant mobility displays a characteristic peak, the height depending on the position of the valleys. In parallel, the Kerr rotation signal is enhanced when same spin-valleys are aligned, and quenched when opposite spin-valleys are populated. We provide guidelines to optimize and correlate these quantities with respect to experimental parameters, as well as the theoretical support for \emph{in situ} characterization of the valley positions.
%G English
%2 https://hal.science/hal-03936372/document
%2 https://hal.science/hal-03936372/file/2207.00452.pdf
%L hal-03936372
%U https://hal.science/hal-03936372
%~ CNRS
%~ L2C
%~ UNIV-MONTPELLIER
%~ UM-2015-2021
%~ UM-EPE