%0 Journal Article
%T Large inverted band gap in strained three-layer InAs/GaInSb quantum wells
%+ Laboratoire Charles Coulomb (L2C)
%+ Institut d’Electronique et des Systèmes (IES)
%+ Composants à Nanostructure pour le moyen infrarouge (NANOMIR)
%+ Matériaux (MAT)
%A Avogadri, C
%A Gebert, S
%A Krishtopenko, S, S
%A Castillo, I
%A Consejo, C
%A Ruffenach, S
%A Roblin, C
%A Bray, C
%A Krupko, Y
%A Juillaguet, S
%A Contreras, S
%A Wolf, A
%A Hartmann, F.
%A Höfling, S
%A Boissier, G
%A Rodriguez, J-B
%A Nanot, S
%A Tournié, E
%A Teppe, F
%A Jouault, B
%Z Terahertz Occitanie Platform
%Z IRP “TeraMIR”
%< avec comité de lecture
%@ 2643-1564
%J Physical Review Research
%I American Physical Society
%V 4
%N 4
%P L042042
%8 2022
%D 2022
%R 10.1103/physrevresearch.4.l042042
%Z Physics [physics]/Condensed Matter [cond-mat]
%Z Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsJournal articles
%X Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band gaps of about 10-18 meV. The former, however, features a band gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature independent. Here, we report on the realization of a large inverted band gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. By combining local and nonlocal measurements, we detect edge conductivity at temperatures up to 40 K, possibly of topological origin, with equilibrium lengths of a few micrometers. Our results pave the way for the manipulation of topological edge states at high temperatures in QW heterostructures.
%G English
%2 https://hal.science/hal-03939599v2/document
%2 https://hal.science/hal-03939599v2/file/2022%20Large%20inverted%20gap%20trilayer_L2C_IES_UW%C3%BC.pdf
%L hal-03939599
%U https://hal.science/hal-03939599
%~ CNRS
%~ IES
%~ OPENAIRE
%~ L2C
%~ UNIV-MONTPELLIER
%~ ANR
%~ UM-2015-2021
%~ UM-EPE
%~ TEST3-HALCNRS