%0 Journal Article
%T Rhombohedral and Turbostratic Boron Nitride:X-ray Diffraction and Photoluminescence Signatures
%+ Chalcogénures : Photovoltaïque et 2D (PV2D)
%+ Laboratoire Charles Coulomb (L2C)
%+ S2QT
%+ Department of Physics, Chemistry and Biology [Linköping] (IFM)
%+ University of Illinois at Urbana-Champaign [Urbana] (UIUC)
%+ Kansas State University
%A Moret, Matthieu
%A Rousseau, Adrien
%A Valvin, Pierre
%A Sharma, Shashim
%A Souqui, Laurent
%A Pedersen, Henrik B
%A Hogberg, Hans
%A Cassabois, Guillaume
%A Li, Jiahan
%A Edgar, J.
%A Gil, Bernard
%< sans comité de lecture
%Z L2C:22-003
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 119
%N 26
%P 262102
%8 2022-01-03
%D 2022
%R 10.1063/5.0076424
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X Boron Nitride (BN) layers with sp2 bonding have been grown by Metal Organic Chemical Vapor Deposition (MOCVD) on AlN underlayers themselves deposited on c-plane sapphire substrates. Two different boron precursors were employed: trimethylboron (TMB) and triethylboron (TEB) while ammonia was used as the nitrogen precursor. The BN obtained epitaxial BN films contain ordered rhombohedral (rBN) and partially ordered turbostratic (tBN) stackings as evidenced by Xray Diffraction analysis. We discriminatively identify the PL signatures of the rBN and tBN from those typical of the hexagonal (hBN) and Bernal stackings (bBN). The optical signature of tBN appears at 5.45eV and it intercalates between the two recombination bands typical of rBN at 5.35 eV ( strong intensity) and 5.55 eV(weaker intensity) . The analogs of the high intensity band at 5.35 eV in rBN sit at 5.47 eV for hBN and at 5.54 eV for bBN.
%G English
%2 https://hal.science/hal-03507440/document
%2 https://hal.science/hal-03507440/file/5.0076424.pdf
%L hal-03507440
%U https://hal.science/hal-03507440
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%~ L2C
%~ UNIV-MONTPELLIER
%~ TEST-HALCNRS
%~ ANR
%~ UM-2015-2021
%~ UM-EPE
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