%0 Conference Paper
%F Oral 
%T Tunneling and Coulomb Blockade in narrow GaAs/InGaAs/AlGaAs Hall bars in the quantum hall regime
%+ Laboratoire Charles Coulomb (L2C)
%+ Groupe d'étude des semiconducteurs (GES)
%+ Centre de Nanosciences et de Nanotechnologies (C2N)
%A Couturaud, O.
%A Jouault, Benoit
%A Bonifacie, S.
%A Chaubet, C.
%A Mailly, D.
%Z 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, JUL 24-28, 2006
%< avec comité de lecture
%B PHYSICS OF SEMICONDUCTORS, PTS A AND B
%C 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA, Unknown Region
%Y Jantsch
%Y W and Schaffler
%Y F
%I AMER INST PHYSICS
%S AIP Conference Proceedings
%V 893
%P 663+
%8 2007
%D 2007
%K integer quantum hall effect
%K electronic transport in mesoscopic systems
%Z Physics [physics]/Condensed Matter [cond-mat]Conference papers
%X We present a low temperature magnetoconductance study of a submicron hall bar made from an AlGaAs/InGaAs/GaAs heterostructure. Experiments were performed at very low temperature (120 mK), with a magnetic field ranging from OT to 13.5 T. In the presence of a quantizing magnetic field, at the transition between two quantized Hall plateaus, a succession of sharp peaks is detected in the Hall signal RH and in the longitudinal resistance R-L. The peaks appearing on the high-v side of the R-L transition appear to be different from the peaks appearing on the low-v side. They mainly differ by their temperature dependence. On the high-v side of the RL transition, the temperature evolution of the peaks is typical for resonant tunneling through a single state in one of the antidots that are progressively formed when the initially occupied LL is emptied. On the low v of the transition, by contrast, the temperature dependence is different. This may be related to the asymmetry of the density of states, or to additional inelastic processes.
%G English
%L hal-03037691
%U https://hal.science/hal-03037691
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ GS-PHYSIQUE
%~ UM1-UM2
%~ UM-2015-2021
%~ C2N