%0 Conference Paper
%F Oral 
%T Quantum Hall resistance standard in graphene grown by CVD on SiC: state-of-the-art of the experimental mastery
%+ Laboratoire National de Métrologie et d'Essais [Trappes] (LNE )
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Centre de Nanosciences et de Nanotechnologies (C2N)
%+ Laboratoire Charles Coulomb (L2C)
%A Brun-Picard, J.
%A Dagher, R.
%A Mailly, D.
%A Nachawaty, A.
%A Jouault, Benoit
%A Michon, A.
%A Poirier, W.
%A Schopfer, F.
%Z Conference on Precision Electromagnetic Measurements (CPEM), Paris, FRANCE, JUL 08-13, 2018
%< avec comité de lecture
%B 2018 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2018)
%C 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region
%I IEEE
%8 2018
%D 2018
%K Graphene
%K materials science and technology
%K measurement standards
%K metrology
%K quantum Hall effect devices
%Z Physics [physics]/Condensed Matter [cond-mat]Conference papers
%X A few years ago, we demonstrated that graphene can markedly surpass GaAs/AlGaAs semiconductor heterostructures for the implementation of the quantum Hall resistance standard in relaxed experimental conditions, while preserving a state-of-the-art accuracy [1]. This paper describes supplementary quantum transport experiments performed on a significant number of graphene based quantum Hall devices obtained from graphene grown by CVD on SiC, like the one used for the above-mentioned demonstration, and with similar process and preparation. The objectives were to investigate the sample-to-sample reproducibility of the electronic properties and device performance, the structural key control parameter and the underpinning physics.
%G English
%L hal-03037687
%U https://hal.science/hal-03037687
%~ UNICE
%~ CNRS
%~ L2C
%~ LNE
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ TEST-HALCNRS
%~ GS-ENGINEERING
%~ GS-PHYSIQUE
%~ INSTITUT-SCIENCES-LUMIERE
%~ CRHEA
%~ UM-2015-2021
%~ C2N