%0 Conference Paper
%F Oral 
%T Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
%+ Centre hospitalier universitaire de Poitiers = Poitiers University Hospital (CHU de Poitiers [La Milétrie])
%+ Laboratoire Charles Coulomb (L2C)
%+ Centro Nacional de Microelectronica [Spain] (CNM)
%+ Groupe d'étude des semiconducteurs (GES)
%+ Instituto de Microelectrònica de Barcelona (IMB-CNM)
%+ Institut de Ciència de Materials de Barcelona (ICMAB)
%+ National Centre for Microelectronic (CNM)
%A Camara, N.
%A Huntzinger, J. R.
%A Tiberj, Antoine
%A Rius, G.
%A Jouault, Benoit
%A Perez-Murano, F.
%A Mestres, N.
%A Godignon, P.
%A Camassel, J.
%Z 7th European Conference on Silicon Carbide and Related Materials, Barcelona, SPAIN, SEP 07-11, 2008
%< avec comité de lecture
%B SILICON CARBIDE AND RELATED MATERIALS 2008
%C LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, Switzerland
%Y PerezTomas
%Y A and Godignon
%Y P and Vellvehi
%Y M and Brosselard
%Y P
%I TRANS TECH PUBLICATIONS LTD
%S Materials Science Forum
%V 615-617
%P 203-206
%8 2008
%D 2008
%R 10.4028/www.scientific.net/MSF.615-617.203
%K epitaxial graphene
%K 4H-SiC
%K 6H-SiC
%K 3C-SiC
%K AFM
%K Raman spectroscopy
%Z Physics [physics]/Condensed Matter [cond-mat]Conference papers
%X We report a comparative investigation of Few layers graphene grown on 6H, 4H, and 3C-SiC substrates. We show that the size of the graphitic domains depends more on the < 0001 > SiC Surface orientation than the polytypism.
%G English
%L hal-03037530
%U https://hal.science/hal-03037530
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM1-UM2
%~ UM-2015-2021