%0 Conference Paper
%F Oral 
%T Weak localization and universal conductance fluctuations on epitaxial graphene grown on the C-face of 8 degrees off-axis 4H-SiC substrates
%+ Laboratoire Charles Coulomb (L2C)
%+ Centro Nacional de Microelectronica [Spain] (CNM)
%A Jabakhanji, Bilal
%A Camara, Nicolas
%A Consejo, Christophe
%A Jouault, Benoit
%Z 1st Mediterranean Conference on Innovative Materials and Applications (CIMA 2011), Beirut, LEBANON, MAR 15-17, 2011
%< avec comité de lecture
%B ADVANCES IN INNOVATIVE MATERIALS AND APPLICATIONS
%C KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland
%Y Soueidan
%Y M and Roumie
%Y M and Masri
%Y P
%I TRANS TECH PUBLICATIONS LTD
%S Advanced Materials Research
%V 324
%P 269+
%8 2011
%D 2011
%R 10.4028/www.scientific.net/AMR.324.269
%K Magnetoresistance
%K weak localization
%K weak antilocalization
%K electron-electron interaction
%K universal conductance fluctuation
%Z Physics [physics]/Condensed Matter [cond-mat]Conference papers
%X We report magnetotransport measurements in single epitaxial graphene layers grown on the C-face of an 8 degrees off-axis 4H-SiC substrate using high temperature annealing conditions with a graphite cap covering the sample. The graphene sheets were found p-type doped, with mobilities varying between 1000 and 11000 cm(2/)V.s from device to device at 1.6 K. We examine the signature of weak localization and universal conductance fluctuations at weak magnetic field and we show that the phase coherence lengths extracted from the two phenomena are in satisfactory agreement.
%G English
%L hal-03037526
%U https://hal.science/hal-03037526
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021