%0 Conference Paper
%F Oral 
%T Almost free standing Graphene on SiC(000-1) and SiC(11-20)
%+ Laboratoire Charles Coulomb (L2C)
%+ Centro Nacional de Microelectronica [Spain] (CNM)
%+ National Centre for Microelectronic (CNM)
%A Jabakhanji, Bilal
%A Camara, Nicolas
%A Caboni, Alessandra
%A Consejo, Christophe
%A Jouault, Benoit
%A Godignon, Philippe
%A Camassel, Jean
%Z 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), Tours, FRANCE, JUN 27-30, 2011
%< avec comité de lecture
%B HETEROSIC & WASMPE 2011
%C KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland
%Y Alquier, D
%I TRANS TECH PUBLICATIONS LTD
%S Materials Science Forum
%V 711
%P 235+
%8 2011
%D 2011
%R 10.4028/www.scientific.net/MSF.711.235
%K epitaxial graphene
%K Raman spectroscopy
%K magneto transport
%Z Physics [physics]/Condensed Matter [cond-mat]Conference papers
%X We present the growth and characterization of epitaxial Graphene on the (000-1) and (11-20) planes. In both cases, the growth was carried out in a RF furnace, by implementing our technique of confined atmosphere, covering the SiC substrate with a graphitic cap during the growth. The grown material was investigated by means of AFM, SEM, Raman spectroscopy and magneto transport. Contrary to the (0001) face, in both faces (000-1) and (11-20), almost free standing Graphene monolayers of very high quality are grown. These Graphene sheet are uniform, continuous, almost strain-free and lightly doped. In both faces, Hall bars were fabricated and Shubnikov-de Haas oscillations typical of Graphene, as well as the Half Integer Quantum Hall Effect are observed.
%G English
%L hal-03037523
%U https://hal.science/hal-03037523
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021