%0 Conference Paper
%F Oral 
%T Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Laboratoire Charles Coulomb (L2C)
%+ Institut de Recherche en Communications et en Cybernétique de Nantes (IRCCyN)
%+ Savoie Technolac (Technolac)
%A Michon, A.
%A Roudon, E.
%A Portail, M.
%A Jouault, Benoit
%A Contreras, S.
%A Chenot, S.
%A Cordier, Y.
%A Lefebvre, D.
%A Vézian, S.
%A Zielinski, M.
%A Chassagne, T.
%A Camassel, Jean
%Z 14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), Cleveland, OH, SEP 11-16, 2011
%< avec comité de lecture
%B SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2
%C KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland
%Y Devaty
%Y RP and Dudley
%Y M and Chow
%Y TP and Neudeck
%Y PG
%I TRANS TECH PUBLICATIONS LTD
%S Materials Science Forum
%V 717-720
%P 625+
%8 2012
%D 2012
%R 10.4028/www.scientific.net/MSF.717-720.625
%K Graphene
%K 6H-SiC
%K 3C-SiC/Si
%K CVD
%Z Physics [physics]/Condensed Matter [cond-mat]Conference papers
%X We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead to the formation of a (6 root 3x6 root 3)-30 degrees interface between graphene and SiC. Electrical properties of samples presenting different graphene/SiC stacking and interfaces are compared and discussed.
%G English
%L hal-03037521
%U https://hal.science/hal-03037521
%~ UNICE
%~ UNIV-NANTES
%~ CNRS
%~ EC-NANTES
%~ IRCCYN
%~ L2C
%~ UNAM
%~ LS2N
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ CRHEA
%~ NANTES-UNIVERSITE
%~ UNIV-NANTES-AV2022
%~ NU-CENTRALE
%~ UM-2015-2021