%0 Journal Article
%T Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC
%+ Laboratoire Charles Coulomb (L2C)
%+ Centre hospitalier universitaire de Poitiers = Poitiers University Hospital (CHU de Poitiers [La Milétrie])
%+ American University of The Middle East [Eqaila]
%+ National Centre for Microelectronic (CNM)
%+ Laboratoire national des champs magnétiques intenses - Grenoble (LNCMI-G)
%+ Groupe d'étude des semiconducteurs (GES)
%A Jouault, Benoit
%A Camara, N.
%A Jabakhanji, B.
%A Caboni, A.
%A Consejo, C.
%A Godignon, P.
%A Maude, Duncan Kennedy
%A Camassel, J.
%< avec comité de lecture
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 100
%N 5
%P 052102
%8 2012
%D 2012
%R 10.1063/1.3680564
%Z Physics [physics]/Condensed Matter [cond-mat]Journal articles
%X We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal. The charge neutrality point is observed close to gate voltage zero, and graphene can be populated by either holes or electrons down to low temperature (1.5 K). The hole concentration is hardly tuned by the gate voltage, possibly because of interface states below the Dirac point. A remarkably large quantum Hall plateau is observed for electrons. (C) 2012 American Institute of Physics. [doi:10.1063/1.3680564]
%G English
%L hal-03037520
%U https://hal.science/hal-03037520
%~ UNIV-TLSE3
%~ UGA
%~ CNRS
%~ UNIV-GRENOBLE1
%~ UNIV-MONTP2
%~ GES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ LNCMI
%~ UNIV-UT3
%~ UT3-INP
%~ UT3-TOULOUSEINP
%~ UM1-UM2
%~ UM-2015-2021