%0 Journal Article
%T Single artificial atoms in silicon emitting at telecom wavelengths
%+ Laboratoire Charles Coulomb (L2C)
%+ Leipzig University / Universität Leipzig
%+ Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP)
%+ University of Oslo (UiO)
%+ Institut des Nanotechnologies de Lyon (INL)
%+ Nanophysique et Semiconducteurs (NPSC)
%+ Modélisation et Exploration des Matériaux (MEM)
%A Redjem, W.
%A Durand, A.
%A Herzig, T.
%A Benali, A.
%A Pezzagna, S.
%A Meijer, J.
%A Kuznetsov, A. Yu.
%A Nguyen, H.
%A Cueff, Sébastien
%A Gérard, J.-M.
%A Robert-Philip, I.
%A Gil, B.
%A Caliste, D.
%A Pochet, P.
%A Abbarchi, M.
%A Jacques, V.
%A Dréau, A.
%A Cassabois, G.
%< avec comité de lecture
%Z L2C:20-192
%@ 2520-1131
%J Nature Electronics
%I Springer Nature
%V 3
%N 12
%P 738-743
%8 2020-12
%D 2020
%R 10.1038/s41928-020-00499-0
%Z Physics [physics]/Quantum Physics [quant-ph]
%Z Physics [physics]/Physics [physics]/Optics [physics.optics]Journal articles
%X Given its potential for integration and scalability, silicon is likely to be a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms, formed by either impurities or quantum dots, have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface, which is needed for long-distance exchange of information, have not yet been isolated in silicon. Here we report the isolation of single optically active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission with a quantum efficiency of the order of unity. This single-photon emission occurs at telecom wavelengths suitable for long-distance propagation in optical fibres. Our results show that silicon can accommodate single isolated optical point defects like in wide-bandgap semiconductors, despite a small bandgap (1.1 eV) that is unfavourable for such observations.
%G English
%2 https://hal.science/hal-03036607/document
%2 https://hal.science/hal-03036607/file/Redjem%20et%20al.%20-%202020%20-%20Single%20artificial%20atoms%20in%20silicon%20emitting%20at%20tel.pdf
%L hal-03036607
%U https://hal.science/hal-03036607
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%~ UGA
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