%0 Journal Article
%T Radiation from shallow oxygen impurity in AlGaN/GaN HEMT structures in magnetic field
%+ Laboratoire Charles Coulomb (L2C)
%A Grigelionis, I.
%A Diakonova, Nina
%A Knap, Wojciech
%A Teppe, Frederic
%A Prystawko, P.
%A Kasalynas, I.
%< avec comité de lecture
%Z L2C:20-134
%@ 0038-1098
%J Solid State Communications
%I Elsevier
%V 320
%P 114019
%8 2020-10
%D 2020
%R 10.1016/j.ssc.2020.114019
%K AlGaN/GaN heterostructure terahertz emission impurities
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X The electrically excited impurity emission from AlGaN/GaN high electron mobility transistor (HEMT) structures in external magnetic field varying from 1.2 T to 1.5 T was investigated in this work at temperature of 4.2 K. We have observed the sharp emission line at (263 ± 1) cm−1 with FWHM of (5.8 ± 0.8) cm−1, which we have attributed to radiative electronic transitions in residual oxygen impurity atoms. The blueshift of resonant transition frequency due to presence of external magnetic field was observed. The width of the peak was found to be defined mainly by the thermal broadening at 4.2 K.
%G English
%L hal-02986295
%U https://hal.science/hal-02986295
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021