%0 Journal Article
%T Analysis of low-threshold optically pumped III-nitride microdisk lasers
%+ Centre de Nanosciences et de Nanotechnologies (C2N)
%+ Laboratoire Charles Coulomb (L2C)
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Nanophysique et Semiconducteurs (NPSC)
%A Tabataba-Vakili, Farsane
%A Brimont, Christelle
%A Alloing, Blandine
%A Damilano, Benjamin
%A Doyennette, Laetitia
%A Guillet, Thierry
%A Kurdi, Moustafa, El
%A Chenot, Sébastien
%A Brändli, Virginie
%A Frayssinet, Eric
%A Duboz, Jean-Yves
%A Semond, Fabrice
%A Gayral, Bruno
%A Boucaud, Philippe
%< avec comité de lecture
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 117
%P 121103
%8 2020-09-22
%D 2020
%R 10.1063/5.0015252
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]
%Z Physics [physics]/Physics [physics]/Optics [physics.optics]Journal articles
%X Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm 2 have been achieved along with narrow linewidths of 0.07 nm and a large peak to background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate equation model. We show that thresholds in the few kW/cm 2 range constitute the best that can be achieved with III-nitride quantum wells at room temperature. The sensitivity of lasing on the fabrication process is also discussed.
%G English
%2 https://hal.science/hal-02946015/document
%2 https://hal.science/hal-02946015/file/md_paper.pdf
%L hal-02946015
%U https://hal.science/hal-02946015
%~ CEA
%~ UNICE
%~ UGA
%~ CNRS
%~ INPG
%~ L2C
%~ CEA-UPSAY
%~ UNIV-PARIS-SACLAY
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ IRIG
%~ CEA-GRE
%~ TEST-HALCNRS
%~ UNIVERSITE-PARIS-SACLAY
%~ UGA-EPE
%~ ANR
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%~ GS-PHYSIQUE
%~ INSTITUT-SCIENCES-LUMIERE
%~ CRHEA
%~ UM-2015-2021
%~ C2N
%~ RENATECH