%0 Journal Article
%T Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient
%+ Kansas State University
%+ Georgia Institute of Technology [Atlanta]
%+ Laboratoire Charles Coulomb (L2C)
%+ NQPO
%+ National University of Singapore (NUS)
%+ Pennsylvania State University (Penn State)
%+ Texas Tech University [Lubbock] (TTU)
%+ University of Bristol [Bristol]
%A Li, Jiahan
%A Chao, Yuan
%A Elias, Christine
%A Wang, Junyong
%A Zhang, Xiaotiang
%A Ye, Gaihua
%A Chaoran, Huang
%A Kuball, Martin
%A Eda, Goki
%A Redwing, Joan M;
%A He, Rui
%A Cassabois, Guillaume
%A Gil, Bernard
%A Valvin, Pierre
%A Pelini, Thomas
%A Liu, Bin
%A Edgar, James H
%< sans comité de lecture
%Z L2C:20-045
%@ 0897-4756
%J Chemistry of Materials
%I American Chemical Society
%V 32
%N 12
%P 5066–5072
%8 2020-06-30
%D 2020
%R 10.1021/acs.chemmater.0c00830
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X Hexagonal boron nitride (hBN) is attracting much attention due to its tremendous applications including nanophotonic and electronic devices, substrates for two-dimensional (2D) materials, heat management materials, etc. To achieve the best device performance, large area hBN single crystals are required. Herein, large area (>500 microns each) high-quality (defect density < 0.52/μm2) bulk hBN single crystals are grown from molten metal solutions with a temperature gradient. The narrow Raman linewidths of the intralayer E2g mode peak and the interlayer shear mode, the strong and sharp phonon-assisted transition photoluminescence peaks, and the high thermal conductivity demonstrate that the hBN produced by this method are high crystal quality with a low density of defects. Atomic force microscope images show that atomically flat layers of hBN can be produced by exfoliation. This study not only demonstrates a new strategy for growing large hBN single crystals, but also provides high quality thick and thin hBN layers for nano device applications
%G English
%L hal-02615364
%U https://hal.science/hal-02615364
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021