New Process for Electrical Contacts on (100) N-type Diamond

Nephi Temahuki , Rémi Gillet , Vincent Sallet (1) , François Jomard (1) , Marie-Amandine Pinault-Thaury (1) , Julien Barjon (1)

1 GEMAC - Groupe d'Etude de la Matière Condensée

Obtaining ohmic contacts on n-type diamond is a very compelling concern in the framework of designing power electronic devices. The present contribution considers a new technological process combining microstructuration and highly phosphorus-doped overgrowth to investigate quasi-ohmic contacts on (100) phosphorus doped diamond. For now, the two processes were tested on (100) and (111) diamond single crystal substrates. The results are exposed and discussed.

Mots clés: phosphorus-doped diamond; electrical contacts; selective microstructuration; nickel etching; MPCVD growth

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Nephi Temahuki, Rémi Gillet, Vincent Sallet, François Jomard, Marie-Amandine Pinault-Thaury, et al.. New Process for Electrical Contacts on (100) N-type Diamond. physica status solidi (a), 2017, 214 (11), pp.1700466. ⟨10.1002/pssa.201700466⟩. ⟨hal-02441414⟩