%0 Journal Article
%T Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)
%+ Georgia Tech Lorraine [Metz]
%+ Laboratoire Charles Coulomb (L2C)
%+ Smith College, Picker Engineering Program, Northampton
%A Ayari, Taha
%A Sundaram, Suresh
%A Bishop, Chris
%A Mballo, Adama
%A Vuong, Phuong
%A Halfaya, Yacine
%A Karrakchou, Soufiane
%A Gautier, Simon
%A Voss, Paul, B
%A Salvestrini, Jean-Paul
%A Ougazzaden, Abdallah
%< avec comité de lecture
%Z III-NITRIDE MATERIALS
%@ 2365-709X
%J Advanced Materials Technologies
%I Wiley
%V 4
%N 10
%P 1970057
%8 2019-10-10
%D 2019
%R 10.1002/admt.201970057
%K h-BN
%K heterogeneous integration
%K III-nitrides
%K pick-and-place
%Z Engineering Sciences [physics]/MaterialsJournal articles
%X In article number 1900164 by Abdallah Ougazzaden and co‐workers, III‐Nitride based LEDs have been locally grown on h‐BN and fabricated at a wafer‐scale. This enables a simple and a dicing‐free pick‐and‐place of the devices on a flexible substrate without performance degradation.
%G English
%L hal-02321646
%U https://hal.science/hal-02321646
%~ CNRS
%~ UNIV-FCOMTE
%~ L2C
%~ CENTRALESUPELEC
%~ UMI-GTL
%~ CENTRALESUPELEC-SACLAY
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021