%0 Journal Article
%T InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon
%+ INL - Spectroscopies et Nanomatériaux (INL - S&N)
%+ INL - Hétéroepitaxie et Nanostructures (INL - H&N)
%+ Laboratoire Charles Coulomb (L2C)
%+ INL - Nanophotonique (INL - Photonique)
%+ Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001))
%A Jaffal, Ali
%A Redjem, Walid
%A Regreny, Philippe
%A Nguyen, Hai Son
%A Cueff, Sébastien
%A Letartre, Xavier
%A Patriarche, Gilles
%A Rousseau, Emmanuel
%A Cassabois, Guillaume
%A Gendry, Michel
%A Chauvin, Nicolas
%< avec comité de lecture
%@ 2040-3364
%J Nanoscale
%I Royal Society of Chemistry
%V 11
%P 21847–21855
%8 2019
%D 2019
%Z 1906.11708
%R 10.1039/C9NR06114B
%Z Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
%Z Physics [physics]/Physics [physics]/Optics [physics.optics]Journal articles
%X Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter tailored to support a single mode waveguide. Such a NW geometry is obtained by a controlled balance over axial and radial growths during the gold-catalyzed growth of the NWs by molecular beam epitaxy. This allows us to investigate the impact of the taper angle on the emission properties of a single InAs/InP QD-NW. At room temperature, a Gaussian far-field emission profile in the telecom O-band with a beam divergence angle θ = 30° is demonstrated from a single InAs QD embedded in a 2° tapered InP NW. Moreover, single photon emission is observed at cryogenic temperature for an off-resonant excitation and the best result, g2(0) = 0.05, is obtained for a 7° tapered NW. This all-encompassing study paves the way for the monolithic growth on silicon of an efficient single photon source in the telecom band based on InAs/InP QD-NWs.
%G English
%L hal-02317732
%U https://hal.science/hal-02317732
%~ CNRS
%~ UNIV-LYON1
%~ UNIV-PSUD
%~ INSA-LYON
%~ EC-LYON
%~ INL
%~ L2C
%~ UNIV-PARIS-SACLAY
%~ UNIV-PSUD-SACLAY
%~ MIPS
%~ UNIV-MONTPELLIER
%~ INSA-GROUPE
%~ UDL
%~ UNIV-LYON
%~ ANR
%~ GS-PHYSIQUE
%~ INSTITUT-SCIENCES-LUMIERE
%~ UM-2015-2021
%~ EC_LYON_STRICT
%~ C2N