%0 Conference Paper
%F Oral 
%T Hexagonal boron nitride: Physics and Applications in the Deep Ultraviolet
%+ Laboratoire Charles Coulomb (L2C)
%A Cassabois, Guillaume
%F Invité
%< sans comité de lecture
%Z L2C:19-169
%B 13th International Conference on Nitride Semiconductors (ICNS13)
%C Seattle, United States
%8 2019-07-08
%D 2019
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Conference papers
%X I will discuss here our results on phonon-assisted recombination in hBN, from bulk crystals to few-layer samples. First, I will focus on hBN crystals where the combination of isotopic purification, Raman scattering and polarized-resolved photoluminescence allowed us to identify the different phonon modes involved in the efficient phonon-assisted recombination in bulk hBN. In a second part, I will discuss photoluminescence experiments in epilayers grown by high-temperature molecular beam epitaxy. These epilayers have a thickness of few monolayers of hBN, and I will show that phonon-assisted recombination displays a distinct phenomenology with a PL spectrum different from the one of bulk crystals.
%G English
%L hal-02289705
%U https://hal.science/hal-02289705
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021