%0 Journal Article
%T Massless Dirac fermions in III-V semiconductor quantum wells
%+ Laboratoire Charles Coulomb (L2C)
%+ Institute for Physics of Microstructures of the RAS
%+ Institut d’Electronique et des Systèmes (IES)
%+ Composants à Nanostructure pour le moyen infrarouge (NANOMIR)
%+ Térahertz, hyperfréquence et optique (TéHO)
%+ Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
%+ Advanced NanOmeter DEvices - IEMN (ANODE - IEMN)
%A Krishtopenko, Sergey S.
%A Desrat, W.
%A Spirin, K.
%A Consejo, C.
%A Ruffenach, S.
%A Gonzalez-Posada, F.
%A Jouault, Benoit
%A Knap, W.
%A Maremyanin, K.
%A Gavrilenko, V.
%A Boissier, G.
%A Torres, J.
%A Zaknoune, M.
%A Tournié, E.
%A Teppe, F.
%< avec comité de lecture
%@ 2469-9950
%J Physical Review B
%I American Physical Society
%V 99
%N 12
%P 121405
%8 2019
%D 2019
%R 10.1103/PhysRevB.99.121405
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau level fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the point of the Brillouin zone. Analysis of experimental data within an analytical Dirac-like Hamiltonian allows us not only to determine the velocity (v F = 1.8 × 10 5 m/s) of massless Dirac fermions, but also to demonstrate a significant nonlinear dispersion at high energies.
%G English
%2 https://hal.science/hal-02072785/document
%2 https://hal.science/hal-02072785/file/Krishtopenko%20S.%2CPhysRevB.99.121405.pdf
%L hal-02072785
%U https://hal.science/hal-02072785
%~ CNRS
%~ UNIV-VALENCIENNES
%~ IEMN
%~ IES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-LILLE
%~ TEST-HALCNRS
%~ ANR
%~ UM-2015-2021