%0 Conference Paper
%F Oral 
%T SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts
%+ Laboratoire Charles Coulomb (L2C)
%+ Total New Energies
%+ Laboratoire des Multimatériaux et Interfaces (LMI)
%A Peyre, Hervé
%A Habka, Nada
%A Soulière, Véronique
%A Soueidan, Maher
%A Ferro, Gabriel
%A Monteil, Yves
%A Camassel, Jean
%< avec comité de lecture
%B 6th European Conference on Silicon Carbide and Related Materials
%C Newcastle upon Tyne, United Kingdom
%S Materials Science Forum
%V 556-557
%P 477-480
%8 2006-09
%D 2006
%R 10.4028/www.scientific.net/MSF.556-557.477
%K Silicon carbides SiC
%K SIMS - Secondary Ion Mass Spectrometry
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%G English
%L hal-02042524
%U https://hal.science/hal-02042524
%~ CNRS
%~ UNIV-LYON1
%~ L2C
%~ LMI
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UDL
%~ UNIV-LYON
%~ UM-2015-2021
%~ TEST2-HALCNRS