%0 Conference Paper
%F Oral 
%T Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
%+ Institute of Electronic Structure & Laser
%+ Newcastle University [Newcastle]
%+ Laboratoire Charles Coulomb (L2C)
%+ Department of Psychiatry [Boston]
%+ Technical University of Crete [Chania]
%+ Aristotle University of Thessaloniki
%A Zekentes, Konstantinos
%A Vassilevski, Konstantin
%A Stavrinidis, Antonis
%A Konstantinidis, Konstantin
%A Kayambaki, Maria
%A Vamvoukakis, Konstantinos
%A Vassakis, Emmanouil
%A Peyre, Hervé
%A Makris, Nikolaos
%A Bucher, Matthias
%A Schmid, Patrick
%A Stefanakis, Dionyssios
%A Tassis, Dimitrios
%< avec comité de lecture
%B 16th International Conference on Silicon Carbide and Related Materials 2015
%C Catane, Italy
%V 858
%P 913-916
%8 2015-10-15
%D 2015
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%G English
%L hal-02025247
%U https://hal.science/hal-02025247
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021