%0 Journal Article
%T Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts
%+ Ampère, Département Energie Electrique (EE)
%+ Institut National des Sciences Appliquées de Lyon (INSA Lyon)
%+ Laboratoire des Multimatériaux et Interfaces (LMI)
%+ Linköping University (LIU)
%+ Laboratoire Charles Coulomb (L2C)
%A Thierry-Jebali, Nicolas
%A Lazar, Mihai
%A Vo-Ha, A.
%A Carole, D.
%A Soulière, V.
%A Henry, A
%A Planson, Dominique
%A Ferro, Gabriel
%A Konczewicz, L.
%A Contreras, Sylvie
%A Brylinski, C.
%A Brosselard, Pierre
%< avec comité de lecture
%@ 0255-5476
%J Materials Science Forum
%I Trans Tech Publications Inc.
%S Silicon Carbide and Related Materials 2013
%8 2014
%D 2014
%R 10.4028/www.scientific.net/MSF.778-780.639
%K Ohmic contact
%K PiN diode
%K p-type 4H-SiC
%K Vapor-Liquid-Solid
%K Selective Epitaxial Growth
%Z Engineering Sciences [physics]/ElectronicsJournal articles
%G English
%2 https://hal.science/hal-01987147/document
%2 https://hal.science/hal-01987147/file/Proceeding-VLS_V2.pdf
%L hal-01987147
%U https://hal.science/hal-01987147
%~ CNRS
%~ UNIV-LYON1
%~ INSA-LYON
%~ EC-LYON
%~ AMPERE
%~ L2C
%~ LMI
%~ INC-CNRS
%~ MIPS
%~ UNIV-MONTPELLIER
%~ INSA-GROUPE
%~ AMP-F07
%~ UDL
%~ UNIV-LYON
%~ INRAE
%~ ANR
%~ UM-2015-2021
%~ TEST2-HALCNRS