%0 Journal Article
%T High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions
%+ Laboratoire Charles Coulomb (L2C)
%A Sadovyi, B.
%A Amilusik, M.
%A Staszczak, G.
%A Bockowski, M.
%A Grzegory, I.
%A Porowski, S.
%A Konczewicz, Leszek
%A Tsybulskyi, V.
%A Panasyuk, M.
%A Rudyk, V.
%A Karbovnyk, I.
%A Kapustianyk, V.
%A Litwin-Staszewska, E.
%A Piotrzkowski, R.
%< avec comité de lecture
%Z L2C:16-416
%@ 0587-4246
%J Acta Physica Polonica A
%I Polish Academy of Sciences. Institute of Physics
%V 129
%N 1A
%P A126-A128
%8 2016-01
%D 2016
%R 10.12693/APhysPolA.129.A-126
%K GaN
%K Electrical properties
%K Crystal growth
%Z PACS: 71.55.Eq, 72.80.E
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.
%G English
%L hal-01944980
%U https://hal.science/hal-01944980
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021