%0 Conference Paper
%F Poster 
%T Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Laboratoire Charles Coulomb (L2C)
%+ Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC)
%+ Physique de l'Exciton, du Photon et du Spin (PEPS)
%A Brault, Julien
%A Leroux, Mathieu
%A Matta, Samuel
%A Al Khalfioui, Mohamed
%A Damilano, Benjamin
%A Peyre, Herve
%A Contreras, Sylvie
%A Juillaguet, Sandrine
%A Gil, Bernard
%Z Poster
%< sans comité de lecture
%Z L2C:18-290
%B International Workshop on Nitride Semiconductor
%C Kanazawa, Japan
%8 2018-11-11
%D 2018
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Poster communications
%X Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy
%G English
%L hal-01937537
%U https://hal.science/hal-01937537
%~ UNICE
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ TEST-HALCNRS
%~ CRHEA
%~ UM-2015-2021