%0 Conference Paper
%F Oral 
%T Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC
%+ Laboratoire des matériaux et du génie physique (LMGP )
%+ Laboratoire Charles Coulomb (L2C)
%+ Département Science et Analyse des Matériaux - SAM (Belvaux, Luxembourg)
%+ Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC)
%A Tsavdaris, Nikolaos
%A Kwasnicki, Pawel
%A Ariyawong, Kanaparin
%A Valle, Nathalie
%A Peyre, Herve
%A Sarigiannidou, Eirini
%A Juillaguet, Sandrine
%A Chaussende, Didier
%< avec comité de lecture
%Z L2C:15-353
%3 Material Sciences Forum
%B ECSCRM
%C Grenoble, France
%I Trans Tech Publications Inc.
%V 821-823
%P 60 - 63
%8 2014-09-21
%D 2014
%R 10.4028/www.scientific.net/MSF.821-823.60
%Z Physics [physics]/Condensed Matter [cond-mat]
%Z Chemical Sciences/Material chemistryConference papers
%X Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC
%G English
%L hal-01936649
%U https://hal.science/hal-01936649
%~ UGA
%~ CNRS
%~ INPG
%~ L2C
%~ LMGP
%~ INC-CNRS
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021