%0 Conference Proceedings
%T Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
%+ Laboratoire Charles Coulomb (L2C)
%+ Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC)
%+ NOVASiC
%A Contreras, Sylvie
%A Konczewicz, Leszek
%A Kwasnicki, Pawel
%A Arvinte, Roxana
%A Peyre, Herve
%A Chassagne, Thierry
%A Zielinski, Marcin
%A Kayambaki, Maria
%A Juillaguet, Sandrine
%A Zekentes, Konstantinos
%< avec comité de lecture
%Z L2C:16-376
%( Material Sciences Forum
%B 16th International Conference on Silicon Carbide and Related Materials
%C Catane, Italy
%V 858
%P 249 - 252
%8 2015-10-05
%D 2015
%R 10.4028/www.scientific.net/MSF.858.249
%Z Physics [physics]/Condensed Matter [cond-mat]
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
%G English
%L hal-01936580
%U https://hal.science/hal-01936580
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021