%0 Conference Proceedings
%T Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
%+ Laboratoire Charles Coulomb (L2C)
%+ Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC)
%A Kwasnicki, Pawel
%A Jokubavicius, V.
%A Sun, J. W.
%A Peyre, Herve
%A Yakimova, R.
%A Syvajarvi, M.
%A Camassel, Jean
%A Juillaguet, Sandrine
%< avec comité de lecture
%Z L2C:14-386
%( Materials Science Forum
%B SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2
%C Miyasaki, Japan
%V 778-780
%P 243-+
%8 2014
%D 2014
%R 10.4028/www.scientific.net/MSF.778-780.243
%K Low temperature photoluminescence
%K 3C-SiC
%K sublimation epitaxy
%K Raman
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
%G English
%L hal-01936275
%U https://hal.science/hal-01936275
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021