%0 Conference Proceedings
%T Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates
%+ Laboratoire Charles Coulomb (L2C)
%+ Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC)
%+ Savoie Technolac (Technolac)
%+ NOVASiC
%A Contreras, Sylvie
%A Konczewicz, Leszek
%A Arvinte, Roxana
%A Peyre, Herve
%A Chassagne, Thierry
%A Zielinski, Marcin
%A Juillaguet, Sandrine
%< avec comité de lecture
%Z L2C:17-312
%( Material Sciences Forum
%B 11th European Conference on Silicon Carbide and Related Materials
%C Thessaloniki, Greece
%3 Mater. Sci. Forum
%V 897
%P 275
%8 2016-09
%D 2016
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates
%G English
%L hal-01935564
%U https://hal.science/hal-01935564
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021