%0 Conference Proceedings
%T High Temperature Annealing of MBE-grown Mg-doped GaN
%+ Laboratoire Charles Coulomb (L2C)
%+ Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC)
%A Contreras, Sylvie
%A Konczewicz, Leszek
%A Peyre, Herve
%A Juillaguet, Sandrine
%A Al Khalfioui, M.
%A Matta, S.
%A Leroux, M.
%A Damilano, B.
%A Brault, J.
%< avec comité de lecture
%Z L2C:17-317
%( Journal of Physics Conference Series
%B 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
%C Peking, China
%V 864
%P UNSP 012018
%8 2017
%D 2017
%R 10.1088/1742-6596/864/1/012018
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
%Z Physics [physics]
%Z Physics [physics]/Condensed Matter [cond-mat]Conference papers
%X High Temperature Annealing of MBE-grown Mg-doped GaN
%G English
%L hal-01935176
%U https://hal.science/hal-01935176
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021