%0 Journal Article
%T Magnetotransport in type-enriched single-wall carbon nanotube networks
%+ Electrical and Computer Engineering - Rice University
%+ Laboratoire Charles Coulomb (L2C)
%A Wang, X.
%A Gao, W.
%A Li, Xiaojian
%A Zhang, Q.
%A Nanot, Sébastien
%A Haroz, E.
%A Kono, J.
%A Rice, W. D.
%< avec comité de lecture
%Z L2C:18-278
%@ 2475-9953
%J Physical Review Materials
%I American Physical Society
%V 2
%P 116001
%8 2018-11-06
%D 2018
%R 10.1103/PhysRevMaterials.2.116001
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
%Z Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]Journal articles
%X Single-wall carbon nanotubes (SWCNTs) exhibit a wide range of physical phenomena depending on their chirality. Nanotube networks typically contain a broad mixture of chiralities, which prevents an in-depth understanding of SWCNT ensemble properties. In particular, electronic-type mixing (the simultaneous presence of semiconductor and metallic nanotubes) in SWCNT networks remains the single largest hurdle to developing a comprehensive view of ensemble nanotube electrical transport, a critical step toward their use in optoelectronics. Here, we systematically study temperature-dependent magnetoconductivity (MC) in networks of highly enriched semiconductor and metal SWCNT films. In the semiconductor-enriched network, we observe two-dimensional variable-range hopping conduction from 5 to 290 K. Low-temperature MC measurements reveal a large, negative MC from which we determine the wave-function localization length and Fermi energy density of states. In contrast, the metal-enriched film exhibits positive MC that increases with decreasing temperature, a behavior attributed to two-dimensional weak localization. Using this model, we determine the details of the carrier phase coherence and fit the temperature-dependent conductivity. These extensive measurements on type-enriched SWCNT networks provide insights that pave the way for the use of SWCNTs in solid-state devices.
%G English
%2 https://hal.science/hal-01934983/document
%2 https://hal.science/hal-01934983/file/PhysRevMaterials.2.116001-accepted.pdf
%L hal-01934983
%U https://hal.science/hal-01934983
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021