%0 Conference Paper
%F Poster 
%T PFO sorted s-SWNT networks for optoelectronics
%+ Laboratoire Charles Coulomb (L2C)
%+ Regroupement Québécois sur les Matériaux de Pointe (RQMP)
%A Gaufrès, Étienne
%A Tang, Y.L.
%A Alvarez, Laurent
%A Martel, R.
%A Izard, Nicolas
%< avec comité de lecture
%Z L2C:17-284
%B GDR-i Graphene and Co 2017
%C Aussois, France
%8 2017-10-15
%D 2017
%Z Engineering Sciences [physics]/Optics / Photonic
%Z Physics [physics]/Physics [physics]/Optics [physics.optics]
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Poster communications
%X The rise of efficient extraction techniques triggered a renewal of interest in semiconducting carbon nanotubes (s-SWNT) research. It represents a great interest for optoelectronics, with outstanding properties in field-effect transistor, and s-SWNT ability to efficiently emit light in the near-IR range. In particular, polyfluorene (PFO) wrapped s‑SWNT (s-SWNT@PFO) display strong photoluminescence, and could be coupled with photonic devices such as microring resonators [1,2] to control photoluminescence linewidth and enhance photoluminescence intensity.The main challenge for using s-SWNT@PFO in optoelectronics lies in the difficulty to establish good electrical contact with a PFO embedded carbon nanotube. We propose to investigate these issues by tuning the amount of PFO wrapping around s-SWNT. A low pressure annealing process is used to selectively remove PFO around s‑SWNT without burning nanotubes themselves (Figure). The resulting s-SWNT@PFO networks are then probed by AFM, Raman spectroscopy, absorption, photoluminescence and electrical experiments.
%G English
%L hal-01930046
%U https://hal.science/hal-01930046
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021