%0 Journal Article
%T Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes
%+ Laboratoire Charles Coulomb (L2C)
%A Dyakonova, Nina
%A Karandashev, Sergey
%A Levinshtein, Michael
%A Matveev, Boris Anatolievich
%A Remennyi, M.
%< avec comité de lecture
%@ 0268-1242
%J Semiconductor Science and Technology
%I IOP Publishing
%8 2018-11-14
%D 2018
%R 10.1088/1361-6641/aaf0c6
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
%Z Physics [physics]Journal articles
%X We report the first experimental study of low-frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes at 300 K and 77 K. At room temperature, the current noise spectral density, SI, depends on frequency as 1/f over the entire current range and tends to the Nyquist noise when the frequency increases. At small reverse currents Irb ≤ 3.10-5 A, SI is proportional to Irb^2 ; at higher currents this dependence changes to SI~ Irb^4 . With temperature decrease down to 77 K, SI becomes proportional to Irb^0.5 , while the reverse current decreasesand the differential resistance grows by 4 orders of magnitude. The noise was also studied in the photovoltaic mode at 100 K, where SI is proportional to 2rb I . We conclude that at 100 K, the Nyquist noise is dominant and can be used for estimations of the specific detectivity of PInAsSbP/n-InAs diodes.
%G English
%L hal-01924190
%U https://hal.science/hal-01924190
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021