%0 Patent
%T FET Terahertz detector with large bandwidth and large dynamic range
%+ Laboratoire Charles Coulomb (L2C)
%+ Institut d’Electronique et des Systèmes (IES)
%+ Térahertz, hyperfréquence et optique (TéHO)
%A Knap, Wojciech
%A Le Bars, Philippe
%A Sahyoun, Walaa
%A Coquillat, Dominique
%A Teppe, Frederic
%A Nouvel, P.
%A Thome, L.
%A Plagellat-Penarier, A.
%A Blin, S.
%N GB2516884B
%Z L2C:17-276
%C United Kingdom
%8 2017-01-04
%D 2017
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Patents
%X An electromagnetic wave detector comprises a field effect transistor, an antenna 601 connected to a first end of a gate 608 of the field effect transistor for receiving incident electromagnetic waves, and a biasing connection pad 605 connected to a second end of the gate 608 for applying a bias voltage to the transistor. The antenna may have a first part 601b connected to the first end of the gate 608 and a second part 601a connected to a source 602 of the transistor. The detector may further comprise a virtual ground element 607 connected to the second end of the gate 608. A control module may control the bias voltage applied on the biasing connection pad 605 according to the electromagnetic power received by the detector. The transistor may be a high electron mobility transistor (HEMT).
%G English
%L hal-01923999
%U https://hal.science/hal-01923999
%~ CNRS
%~ IES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021