%0 Journal Article
%T Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well
%+ Laboratoire Charles Coulomb (L2C)
%+ Institut d’Electronique et des Systèmes (IES)
%+ Composants à Nanostructure pour le moyen infrarouge (NANOMIR)
%A Krishtopenko, Sergey S.
%A Ruffenach, Sandra
%A Gonzalez-Posada, F.
%A Boissier, G.
%A Marcinkiewicz, M.
%A Fadeev, M. A.
%A Kadykov, Aleksandr
%A Rumyantsev, V. V.
%A Morozov, S. V.
%A Gavrilenko, V. I.
%A Consejo, Christophe
%A Desrat, Wilfried
%A Jouault, Benoit
%A Knap, Wojciech
%A Tournié, Eric
%A Teppe, Frederic
%< avec comité de lecture
%Z L2C:18-115
%@ 2469-9950
%J Physical Review B
%I American Physical Society
%V 97
%N 24
%P 245419
%8 2018-06-22
%D 2018
%R 10.1103/PhysRevB.97.245419
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We report on temperature-dependent terahertz spectroscopy of a three-layer InAs/GaSb/InAs quantum well (QW) with inverted-band structure. The interband optical transitions, measured up to 16 T at different temperatures by Landau-level magnetospectroscopy, demonstrate the inverted-band structure of the QW. The terahertz photoluminescence at different temperatures allows us to directly extract the optical gap in the vicinity of the Γ point of the Brillouin zone. Our results experimentally demonstrate that the gap in the three-layer QWs is temperature independent and exceeds by four times the maximum band gap available in the inverted InAs/GaSb bilayers.
%G English
%2 https://hal.science/hal-01862289/document
%2 https://hal.science/hal-01862289/file/PhysRevB.97.245419.pdf
%L hal-01862289
%U https://hal.science/hal-01862289
%~ CNRS
%~ IES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ ANR
%~ UM-2015-2021