%0 Conference Paper
%F Oral 
%T Reducing noise equivalent power in InP DHBT terahertz detector by biasing the collector
%+ Laboratoire Charles Coulomb (L2C)
%+ Institut d’Electronique et des Systèmes (IES)
%+ Térahertz, hyperfréquence et optique (TéHO)
%+ Alcatel-Thalès III-V lab (III-V Lab)
%A Dyakonova, N.
%A Coquillat, D.
%A But, D.
%A Consejo, C.
%A Teppe, F.
%A Knap, W.
%A Varani, L.
%A Blin, S.
%A Nodjiadjim, V.
%A Konczykowska, A.
%A Riet, M.
%< avec comité de lecture
%B 2017 International Conference on Noise and Fluctuations (ICNF)
%C Vilnius, Lithuania
%I IEEE
%8 2017-06-20
%D 2017
%R 10.1109/ICNF.2017.7986010
%K photocurrent
%K InP
%K detectors
%K THz
%K NEP
%K low frequency noise
%K DHBT
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X —We present the low frequency noise and the photoresponse in InP double heterojunction bipolar transistor (DHBT) THz detectors. A current responsivity of 0.23 A/W and a noise equivalent power of 4·10-10 W/Hz 1/2 have been measured at 1 kHz modulation frequency. The collector bias can substantially reduce the noise equivalent power.
%G English
%L hal-01818746
%U https://hal.science/hal-01818746
%~ CNRS
%~ IES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021