%0 Conference Proceedings
%T A Raman study of coupled plasmon—LO phonon modes at ZnSe—GaAs interfaces
%+ Laboratoire de Spectromètrie Optique de la Matière (LSOM)
%+ Groupe d'étude des semiconducteurs (GES)
%+ Laboratoire de physico-chimie des interfaces et applications (LPCIA)
%A Pages, O.
%A Soltani, M.
%A Zaoui, A.
%A Certier, M.
%A Laurenti, J.P.
%A Cloitre, Thierry
%A Aulombard, R.L.
%A Bormann, D.
%A Khelifa, B.
%< avec comité de lecture
%( JOURNAL OF CRYSTAL GROWTHVolume: 184Pages: 188-192
%B 8th International Conference on II-VI Compounds
%C Grenoble, France
%V 184-185
%P 188 - 192
%8 1998-08-25
%D 1998
%R 10.1016/S0022-0248(98)80319-9
%Z Physics [physics]/Condensed Matter [cond-mat]
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Raman scattering is used to investigate p-type accumulation zones on the substrate side of ZnSe—GaAs heterostructures. The intensity imbalance between (i) the near-interfacial phonon-plasmon coupled mode located below the TO frequency and (ii) the uncoupled LO mode from the deep substrate, is studied at a single wavelength under increasing illumination. Competition between electric field-induced scattering and more trivial scattering volume effects is discussed.
%G English
%L hal-01816844
%U https://hal.science/hal-01816844
%~ UNIV-ARTOIS
%~ CNRS
%~ UNIV-MONTP2
%~ UNIV-METZ
%~ GES
%~ UNIV-LORRAINE
%~ UNIV-MONTPELLIER
%~ UM1-UM2