%0 Journal Article %T Superconducting Ga/GaSe layers grown by van der Waals epitaxy %+ Laboratoire Charles Coulomb (L2C) %+ Laboratoire national des champs magnétiques intenses - Grenoble (LNCMI-G ) %A Desrat, Wilfried %A Moret, Matthieu %A Briot, Olivier %A Ngo, Th %A Jabakhanji, Bilal %A Piot, Benjamin %A Gil, Bernard %< avec comité de lecture %Z L2C:18-067 %J Materials Research Express %I IOP Publishing Ltd %V 5 %P 045901 %8 2018-05-03 %D 2018 %R 10.1088/2053-1591/aab8c5 %K GaSe %K superconductivity %K 2D %Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles %X We report on the growth of GaSe films by molecular beam epitaxy on both (111)B GaAs and sapphire substrates. X-ray diffraction reveals the perfect crystallinity of GaSe with the c-axis normal to the substrate surface. The samples grown under Ga rich conditions possess an additional gallium film on top of the monochalcogenide layer. This metallic film shows two normal-to-superconducting transitions which are detected at T c ≈ 1.1 K and 6.0 K. They correspond likely to the β and α-phases of gallium in the form of bulk and droplets respectively. Our results demonstrate that van der Waals epitaxy can lead to future high quality hybrid superconductor/monochalcogenide heterostructures. %G English %L hal-01784269 %U https://hal.science/hal-01784269 %~ UNIV-TLSE3 %~ UGA %~ CNRS %~ L2C %~ MIPS %~ UNIV-MONTPELLIER %~ LNCMI %~ UGA-COMUE %~ UNIV-UT3 %~ UT3-INP %~ UT3-TOULOUSEINP %~ UM-2015-2021