Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching in Phase-Change Memory

Corentin Pigot (1) , Fabien Gilibert (2) , Marina Reyboz (3) , Marc Bocquet (1) , Paola Zuliani (3) , Jean-Michel Portal (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 ST-CROLLES - STMicroelectronics [Crolles]
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

A Phase-Change Memory (PCM) physical-based compact modeling of the subthreshold conduction together with the threshold switching is proposed and the results are compared to experimental data collected on a PCM cell embedded in a 90nm technology. The good correlation between simulations and measurements for all intermediate states with a single set of parameters proves the accuracy of the model. Moreover, the constant threshold power measured brings evidence in favor of a thermally activated threshold in nanoscale PCM devices.

Domaines: Micro et nanotechnologies/Microélectronique

Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Paola Zuliani, et al.. Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching in Phase-Change Memory. 49th International Conference on Solid State Devices and Materals, Sep 2017, Tsukuba, Japan. ⟨hal-01737914⟩