%0 Conference Paper
%F Oral 
%T Cross-section doping topography of 4H-SiC VJFETs by various techniques
%+ Institute for Electronic Structure and Laser (IESL)
%+ GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347)
%+ Laboratoire Charles Coulomb (L2C)
%A Tsagaraki, K.
%A Nafouti, Maher
%A Peyre, H.
%A Vamvoukakis, K
%A Makris, N
%A Kayambaki, M
%A Stavrinidis, A
%A Konstantinidis, G
%A Panagopoulou, M
%A Alquier, D.
%A Zekentes, Konstantinos
%< avec comité de lecture
%B International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)
%C Washington, DC, United States
%8 2017-09-17
%D 2017
%R 10.4028/www.scientific.net/MSF.924.653
%K TSI-VJFET
%K SIMS
%K SSRM
%K SEM
%K Silicon Carbide
%K SCM
%Z Engineering Sciences [physics]/ElectronicsConference papers
%X Different methods for cross-section doping topography of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the doping distribution in the epitaxial structure and the implanted areas.
%G English
%2 https://hal.science/hal-01698971/document
%2 https://hal.science/hal-01698971/file/ICSCRM%2717_Manuscript_Cross-section_corrected%20final.pdf
%L hal-01698971
%U https://hal.science/hal-01698971
%~ UNIV-TOURS
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ GREMAN
%~ INSA-GROUPE
%~ INSA-CVL
%~ UM-2015-2021
%~ TEST3-HALCNRS