%0 Journal Article
%T Isotope engineering of van der Waals interactions in hexagonal boron nitride
%+ ILC
%+ Institut Européen des membranes (IEM)
%+ Institute of Earth Sciences Jaume Almera
%+ CSI, INPG, Grenoble (CSI)
%+ Laboratoire Charles Coulomb (L2C)
%+ Laboratoire Pierre Aigrain (LPA)
%A Vuong, P.
%A Liu, S.
%A van Der Lee, A.
%A Cusco, R.
%A Artus, L.
%A Michel, T.
%A Valvin, P.
%A Edgar, J. H.
%A Cassabois, Guillaume
%A Gil, Bernard
%< avec comité de lecture
%Z L2C:18-010
%@ 1476-1122
%J Nature Materials
%I Nature Publishing Group
%V 17
%P 152
%8 2017-12-11
%D 2017
%R 10.1038/nmat5048
%Z Chemical SciencesJournal articles
%X Hexagonal boron nitride is a model lamellar compound where weak, non-local van der Waals interactions ensure the vertical stacking of two-dimensional honeycomb lattices made of strongly bound boron and nitrogen atoms. We study the isotope engineering of lamellar compounds by synthesizing hexagonal boron nitride crystals with nearly pure boron isotopes ( 10 B and 11 B) compared to those with the natural distribution of boron (20 at% 10 B and 80 at% 11 B). On the one hand, as with standard semiconductors, both the phonon energy and electronic bandgap varied with the boron isotope mass, the latter due to the quantum effect of zero-point renormalization. On the other hand, temperature-dependent experiments focusing on the shear and breathing motions of adjacent layers revealed the specificity of isotope engineering in a layered material, with a modification of the van der Waals interactions upon isotope purification. The electron density distribution is more diffuse between adjacent layers in 10 BN than in 11 BN crystals. Our results open perspectives in understanding and controlling van der Waals bonding in layered materials.
%G English
%L hal-01675183
%U https://hal.umontpellier.fr/hal-01675183
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