%0 Journal Article
%T Optical properties of an ensemble of G-centers in silicon
%+ Laboratoire Charles Coulomb (L2C)
%A Beaufils, Clément
%A Redjem, Walid
%A Rousseau, Emmanuel
%A Jacques, Vincent
%A Kuznetsov, A. Yu.
%A Raynaud, C.
%A Voisin, C.
%A Benali, A.
%A Herzig, T.
%A Pezzagna, S.
%A Meijer, J.
%A Abbarchi, Marco
%A Cassabois, Guillaume
%Z . Réf Journal: Phys. Rev. B 97, 035303 (2018)
%< avec comité de lecture
%Z L2C:18-009
%@ 2469-9950
%J Physical Review B
%I American Physical Society
%V 97
%N 3
%P 035303
%8 2018-01-09
%D 2018
%Z 1708.05238
%R 10.1103/PhysRevB.97.035303
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280 nm) and the broad asymmetric sideband developing at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6$\pm$0.1 $\angstrom$ for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform.
%G English
%2 https://hal.science/hal-01698220/document
%2 https://hal.science/hal-01698220/file/PhysRevD.97.pdf
%L hal-01698220
%U https://hal.science/hal-01698220
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021