%0 Journal Article
%T Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Laboratoire Charles Coulomb (L2C)
%+ Physique de l'Exciton, du Photon et du Spin (PEPS)
%A Matta, Samuel
%A Brault, Julien
%A Ngo, Thi Huong
%A Damilano, B.
%A Korytov, Maxim
%A Vennegues, P
%A Nemoz, Maud
%A Massies, Jean
%A Leroux, Mathieu
%A Gil, Bernard
%< avec comité de lecture
%Z L2C:17-092
%@ 0021-8979
%J Journal of Applied Physics
%I American Institute of Physics
%V 122
%P 085706
%8 2017-08-31
%D 2017
%R 10.1063/1.5000238
%K semi-conducteursémetteurs compacts de lumière UV
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X The optical properties of AlyGa1-yN quantum dots (QDs), with y 1⁄4 0 or y 1⁄4 0.1, in an AlxGa1 xN matrix are studied. The influence of the QD layer design is investigated pointing out the correlations between the QD structural and optical properties. In a first part, the role of the epitaxial strain in the dot self-assembling process is studied by fabricating GaN QD layers on different AlxGa1 xN layers with 0.5 x 0.7. Photoluminescence (PL) measurements show the main influ- ence of the increase of the internal electric field (Fint) on the QD optical response inducing a strong red shift in the emission energy as x increases. Time resolved combined with temperature depen- dent PL measurements enabled the estimation of the QD internal quantum efficiencies at low tem- perature showing values around 50%. In addition, a PL integrated intensity ratio up to 74% is shown, between 300 and 9 K. In the second part, the design of Al0.1Ga0.9N QDs was investigated, by varying the Al0.1Ga0.9N amount deposited. An increase of the transition energy (from 3.65 eV up to 3.83eV) is obtained while decreasing the deposited amount. Calculations of the ground state transition energies as a function of the Al0.1Ga0.9N dot height give a value of Fint around 2.060.5MV/cm. Therefore, the propensity of Al0.1Ga0.9N dots to emit at much higher energies than GaN dots (a PL shift of 1 eV using a low excitation power) is seen as the consequence of the reduced Fint together with their smaller sizes.
%G English
%L hal-01579358
%U https://hal.science/hal-01579358
%~ UNICE
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ TEST-HALCNRS
%~ ANR
%~ CRHEA
%~ UM-2015-2021
%~ TEST3-HALCNRS