%0 Conference Proceedings %T High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors %+ Laboratoire Charles Coulomb (L2C) %+ Alcatel-Thalès III-V lab (III-V Lab) %+ Institut d’Electronique et des Systèmes (IES) %+ Térahertz, hyperfréquence et optique (TéHO) %A Coquillat, Dominique %A Nodjiadjim, V. %A Blin, S. %A Konczykowska, A. %A Diakonova, Nina %A Consejo, Christophe %A Nouvel, P. %A Pénarier, A. %A Torres, J. %A But, Dmytro %A Ruffenach, Sandra %A Teppe, Frederic %A Riet, M. %A Muraviev, A. %A Gutin, A. %A Shur, M. %A Knap, Wojciech %< avec comité de lecture %Z L2C:17-072 %( Selected Topics in Electronics and Systems %B FUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES %C Sendai, Japan %V 58 %P 1-9 %8 2017 %D 2017 %R 10.1142/S0129156416400115 %K THz power detectors %K Double heterojunction bipolar transistor (DHBT) %K THz imaging %Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers %X Compact and fast detectors, for imaging and wireless communication applications, require efficient rectification of electromagnetic radiation with frequencies approaching 1 THz and modulation bandwidth up to a few tens of GHz. This can be obtained only by using a mature technology allowing monolithic integration of detectors with low-noise amplifiers. One of the best candidates is indium phosphide bipolar transistor (InP HBT) technology. In this work, we report on room temperature high sensitivity terahertz detection by InP double-heterojunction bipolar transistors (DHBTs) operating in a large frequency range (0.25–3.1 THz). The performances of the DHBTs as terahertz sensors for communications were evaluated showing the modulation bandwidth of investigated DHBTs close to 10 GHz. %G English %L hal-01555388 %U https://hal.science/hal-01555388 %~ CNRS %~ IES %~ L2C %~ MIPS %~ UNIV-MONTPELLIER %~ UM-2015-2021