%0 Journal Article %T Growth of low doped monolayer graphene on SiC(0001) viasublimation at low argon pressure %+ Laboratoire Charles Coulomb (L2C) %+ Institut des Matériaux Jean Rouxel (IMN) %A Landois, Perine %A Wang, Tianlin %A Nachawaty, Abir %A Bayle, Maxime %A Decams, J.M. %A Desrat, Wilfried %A Zahab, Ahmed Azmi %A Jouault, Benoit %A Paillet, Matthieu %A Contreras, Sylvie %< avec comité de lecture %Z L2C:17-061 %@ 1463-9076 %J Physical Chemistry Chemical Physics %I Royal Society of Chemistry %P 10.1039/c7cp01012e %8 2017-05-12 %D 2017 %R 10.1039/c7cp01012e %Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles %X Silicon carbide (SiC) sublimation is the most promising option to achieve transfer-free graphene at the wafer-scale. We investigated the initial growth stages from the buffer layer to monolayer graphene on SiC(0001) as a function of annealing temperature at low argon pressure (10 mbar). A buffer layer, fully covering the SiC substrate, forms when the substrate is annealed at 1600°C. Graphene formation starts from the step edges of the SiC substrate at higher temperature (1700°C). The spatial homogeneity of the monolayer graphene was observed at 1750°C, as characterized by Raman spectroscopy and magneto-transport. Raman spectroscopy mapping indicated an AG-graphene/AG-HOPG ratio of around 3.3%, which is very close to the experimental value reported for a graphene monolayer. Transport measurements fromroom temperature down to 1.7 K indicated slightly p-doped samples (p~10^10cm-2) and confirmed both continuity and thickness of the monolayer graphene film. Successive growth processes have confirmed the reproducibility and homogeneity of these monolayer films. %G English %L hal-01540335 %U https://hal.science/hal-01540335 %~ UNIV-NANTES %~ CNRS %~ IMN %~ L2C %~ INC-CNRS %~ MIPS %~ UNIV-MONTPELLIER %~ TEST-HALCNRS %~ ANR %~ NANTES-UNIVERSITE %~ UNIV-NANTES-AV2022 %~ UM-2015-2021