%0 Conference Paper
%F Oral 
%T Terahertz detection by AlGaN/GaN HEMTs at high intensity
%+ Laboratoire Charles Coulomb (L2C)
%A Diakonova, Nina
%A Coquillat, Dominique
%A But, Dmytro
%A Teppe, Frederic
%A Knap, Wojciech
%A Faltermeier, P.
%A Olbrich, P.
%A Ganichev, S. D.
%A Szkudlarek, K.
%A Cywinski, G.
%< avec comité de lecture
%Z L2C:16-242
%B 2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON)
%C Cracovie, Poland
%P 1
%8 2016-04-26
%D 2016
%K AlGaN/GaN
%K HEMT
%K THz
%K detection
%K high intensity radiation
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X We report on the photoresponse of AlGaN/GaN HEMT to THz radiation of low and high intensity. We show that the response vs. gate bias dependence can be described by the theory of Dyakonov-Shur in the whole range of radiation intensity. Unusual behavior of the photoresponse vs. intensity was observed under laser irradiation: a quadratic increase of the response followed by saturation. We speculate that this phenomenon can be explained by hot electrons capture by traps in AlGaN or buffer layers.
%G English
%L hal-01436847
%U https://hal.science/hal-01436847
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021