GaN/AIGaN Based Transistors for Terahertz Emitters and Detectors
Résumé
We present results of investigations of Plasma Assisted Molecular Beam Epitaxy (PAMBE) - grown GaN/AIGaN High Electron Mobility Transistor (HEMT) structures for fabrication of detectors and emitters operating in THz spectral range. These devices are standard HEMT structures but equipped with additional antennas that ensure THz radiation coupling. THz detectors and emitters were processed using different HEMT designs. The results of emission experiments at room temperature demonstrate emission in the spectral range from 0.5 to 12 THz with a total integrated power of the single transistor of the order of 100 nW. The results of room temperature THz detection (photoresponse experiments) in the ranges 110-170 and 220-330 GHz are presented and discussed. THz experiments, transistor electrical tests and data analysis presented in this work, clearly show that PAMBE grown GaN/AIGaN transistors can used as promising elements of future THz imaging systems.