%0 Conference Proceedings
%T Observation of topological phase transition by terahertz photoconductivity in HgTe-based transistors
%+ Laboratoire Charles Coulomb (L2C)
%A Kadykov, Aleksandr
%A Consejo, Christophe
%A Marcinkiewicz, M.
%A Viti, L.
%A Vitiello, M. S.
%A Krishtopenko, Sergey S.
%A Ruffenach, Sandra
%A Morozov, S. V.
%A Desrat, Wilfried
%A Diakonova, Nina
%A Knap, Wojciech
%A Gavrilenko, V. I.
%A Mikhailov, N. N.
%A Dvoretsky, S. A.
%A Teppe, Frederic
%< avec comité de lecture
%Z L2C:16-207
%( Physica Status Solidi C-Current Topics in Solid State Physics
%B 17th International Conference on II-VI Compounds
%C Paris, France
%V 13
%N 7-9
%P 534-537
%8 2016
%D 2016
%R 10.1002/pssc.201510264
%K terahertz photoconductivity
%K field effect transistors
%K topological transitions
%K magnetic-field
%K Landau levels
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We have found the possibility to probe the magnetic field-driven topological phase transition in HgTe-based transistors by measuring their Terahertz photoconductivity response. At the critical magnetic field to which zero-mode Landau levels cross, we have observed a pronounced photoconductivity peak independent on incident frequency and carrier concentration. Our results pave the way towards terahertz topological field effect transistors.
%G English
%L hal-01417831
%U https://hal.science/hal-01417831
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021