%0 Conference Proceedings
%T Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport
%+ Ampère (AMPERE)
%+ Laboratoire des Multimatériaux et Interfaces (LMI)
%+ Laboratoire Charles Coulomb (L2C)
%A Thierry-Jebali, Nicolas
%A Vo-Ha, Arthur
%A Carole, Davy
%A Lazar, Mihai
%A Ferro, Gabriel
%A Peyre, Herve
%A Contreras, Sylvie
%A Brosselard, Pierre
%< avec comité de lecture
%Z L2C:15-301
%( Materials Science Forum
%B HeteroSiC-WASMPE
%C Nice, France
%Y Marcin Zielinski
%I Trans Tech Publications Inc.
%3 HeteroSiC and WASMPE 2013
%V 806
%P 57 - 60
%8 2013-06-17
%D 2013
%R 10.4028/www.scientific.net/MSF.806.57
%K Ohmic Contact
%K Vapor-Liquid-Solid
%K Selective Epitaxial Growth
%K p++ 4H-SiC
%Z Engineering Sciences [physics]/Electric powerConference papers
%G English
%L hal-01391861
%U https://hal.science/hal-01391861
%~ CNRS
%~ UNIV-LYON1
%~ INSA-LYON
%~ EC-LYON
%~ AMPERE
%~ L2C
%~ LMI
%~ INC-CNRS
%~ MIPS
%~ UNIV-MONTPELLIER
%~ INSA-GROUPE
%~ UDL
%~ UNIV-LYON
%~ INRAE
%~ UM-2015-2021
%~ TEST2-HALCNRS