%0 Conference Paper
%F Oral 
%T Terahertz Imaging with GaAs and GaN Plasma Field Effect Transistors Detectors
%+ Laboratoire Charles Coulomb (L2C)
%A Knap, Wojciech
%A But, Dmytro B.
%A Diakonova, Nina
%A Coquillat, Dominique
%A Teppe, Frederic
%A Suszek, Jaroslaw
%A Siemion, Agnieszka M.
%A Sypek, Maciej
%A Szkudlarek, Krzesimir
%A Cywinski, Grzegorz
%A Yahniuk, Ivan
%< avec comité de lecture
%Z L2C:16-148
%B PROCEEDINGS OF THE 23RD INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
%C Lodz, Poland
%P 74-77
%8 2016-06-23
%D 2016
%K Terahertz detectors
%K GaN THz FETs
%K THz cameras
%K security scanners
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X An overview of recent results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular, the research on the dynamic range of these detectors is described and two different technologies GaAs and GaN are compared. As a conclusion, we will show first real world applications of the plasma field effect transistors based THz detectors: demonstrators of the imagers (cameras and linear scanners) developed for fast postal security and for nondestructive industrial quality control.
%G English
%L hal-01380958
%U https://hal.science/hal-01380958
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021